FQT3P20TF
Manufacturer:
On Semiconductor
Mfr.Part #:
FQT3P20TF
Datasheet:
Description:
MOSFETs SOT-223-4 SMD/SMT P-Channel number of channels:1 2.5 W -200 V Continuous Drain Current (ID):670 mA 8 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -200 V |
| Length | 6.5 mm |
| Width | 3.56 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Resistance | 2.7 Ω |
| Height | 1.6 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| Number of Elements | 1 |
| Current Rating | -670 mA |
| Max Power Dissipation | 2.5 W |
| Power Dissipation | 2.5 W |
| Number of Channels | 1 |
| Input capacitance | 250 pF |
| Continuous Drain Current (ID) | 670 mA |
| Rds On Max | 2.7 Ω |
| Drain to Source Voltage (Vdss) | 200 V |
| Turn-On Delay Time | 8.5 ns |
| Turn-Off Delay Time | 12 ns |
| Element Configuration | Single |
| Fall Time | 25 ns |
| Rise Time | 35 ns |
| Gate Charge | 8 nC |
| Drain to Source Resistance | 2.7 Ω |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | -200 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 5 V |
| FET Type(Transistor Polarity) | P-Channel |
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